Yun Zhang-江苏大学机械工程学院

　　Name: Yun Zhang

　　Ph. D, Professor, Master supervisor

　　Address: Room B511-2, MSE Building

　　Phone: (86) 13196975380, (86) 511-88797228

　　Fax: /

　　E-mail: yzhang@ujs.edu.cn

Education

2006-2010 B.S, School of Physics, Nanjing University, China
2010-2013 Master, School of Physics, Nanjing University, China
2013-2017 Ph.D. Department of Electronic and Electrical Engineering, The University of Sheffield, UK

Professional Experience

2018-2020, Associate Professor, School of Mechanical Engineering, Jiangsu University, China
2020-Present, Professor, School of Mechanical Engineering, Jiangsu University, China

Research Interests

1. III-nitrides materials and devices:
In this project, we are going to investigate some novel light emitting diodes based on III-nitrides. Main efforts will be put on the semi-polar and non-polar orientations, who own an advantage of reduced internal electrical fields. New devices would be developed in these orientations, that could be applied in the fields of illumination, display, communication and so on.

2. Hybrid III-nitrides/organic Optoelectronics: …
In this project , we will develop some bright light emitting diodes with blue light from III-nitrides, and green/yellow/red light from some organic materials. The colour index, optical quality and device lifetime would be optimised to reach a goal of commercial application.

Teaching Courses

1. Optics (Undergraduate course, 3rd term)
2. Basic Theory of Laser-Matter Interaction (Graduate course, 2nd term)

Main Research Projects

1. Investigation of the influence from stacking fault on optical and electrical properties of semi-polar and non-polar InGaN-based LEDs (No. 61904068), NSFC, 2020-2022.

Main Scientific Publications

1. Kun Xing*, Xueying Cheng, Liancheng Wang, Shirong Chen, Yun Zhang*, and Huaguo Liang, Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing, Journal of Crystal Growth 570 126207 (2021)
2. Zhe Zhuang*, Cheng Li, Yun Zhang, Bin Liu*, Xiong Zhang, Aijie Fan, Shuai Chen, Liang Lu and Yiping Cui*, Influence of plasmonic resonant wavelength on energy transfer from an InGaN quantum well to quantum dots, Applied Physics Letter 118, 202103 (2021)
3. Maogao Gong, Kun Xing, Yun Zhang*, Bin Liu*, Tao Tao, Zili Xie, Rong Zhang and Youdou Zheng, Semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent, Applied Physics Express, 13, 091002 (2020)
4 Y. Zhang, R. M. Smith, L. Jiu, J. Bai and T. Wang*, Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes, Scientific Reports, 9, 9735 (2019)
5 G. Naresh-Kumar, D. Thomson, Y. Zhang, J. Bai, L. Jiu, X. Yu, Y. Gong, R. Smith, T. Wang, and Carol Trager-Cowan, Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging, Journal of Applied Physics 124, 065301 (2018)

Plan for Overseas Master & Ph. D

One Master